A team of scientists from the Moscow Institute of Physics and Technology (MIPT) have created prototypes of "electronic synapses" based on ultra-thin films of hafnium oxide (HfO2). These prototypes could potentially be used in fundamentally new computing systems. The paper has been published in the journal Nanoscale Research Letters.
The group of researchers from MIPT have made HfO2-based memristors measuring just 40x40 nm2. The nanostructures they built exhibit properties similar to biological synapses. Using newly developed technology, the memristors were integrated in matrices: in the future this technology may be used to design computers that function similar to biological neural networks.